Simulation-oriented noise model for MOS devices
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (6), 1209-1212
- https://doi.org/10.1109/jssc.1987.1052878
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Problems in Precision Modeling of the MOS Transistor for Analog ApplicationsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1984
- Switched Capacitor CircuitsPublished by Springer Nature ,1984
- 1/f; noise model for MOSTs biased in nonohmic regionSolid-State Electronics, 1980
- Low-frequency noise considerations for MOS amplifiers designIEEE Journal of Solid-State Circuits, 1979
- FET noise sources and their effects on amplifier performance at low frequenciesIEEE Transactions on Electron Devices, 1972
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968