Numerical simulation of carrier collection and recombination at grain boundaries in Cu(In,Ga)Se2 solar cells

Abstract

Two-dimensional numerical device simulations investigate the influence of grain boundaries (GBs) on the performance of $\text{Cu}\left(\text{In},\text{Ga}\right){\text{Se}}_2$ solar cells. We find that the electronic activity of grain boundaries can reduce the efficiency of $\text{Cu}\left(\text{In},\text{Ga}\right){\text{Se}}_2$ solar cells from 20% to below 12% making proper passivation of GBs a primary requirement for high efficiency. Cell efficiencies larger than 19% require GB defect densities below ${10}^{11}{\text{cm}}^{-2}$ . Also, an internal band offset in the valence band due to a Cu-poor region adjacent to the GBs could effectively passivate grain boundaries that are otherwise very recombination active. It is shown that such a barrier must be more than 300 meV high and at least 3 nm wide to virtually suppress all grain boundary recombination. Contrariwise, such a barrier represents an obstacle for hole transport reducing carrier collection across grain boundaries that are not perpendicular to the cell surface. We further find that inverted grain boundaries lead to an accumulation of the short circuit current along the grain boundary, which in certain situations enhances the total short circuit current. However, we do not find any beneficial effect of any type of grain boundaries on the overall cell efficiency.