Studies on Pd/3C-SiC Schottky junction hydrogen sensors at high temperature
- 8 July 2003
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 94 (3), 298-303
- https://doi.org/10.1016/s0925-4005(03)00380-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at high temperatureSensors and Actuators B: Chemical, 2001
- A study on a platinum–silicon carbide Schottky diode as a hydrogen gas sensorSensors and Actuators B: Chemical, 2000
- Silicon-carbide MOS capacitors with laser-ablated Pt gate as combustible gas sensorsSensors and Actuators B: Chemical, 2000
- Heteroepitaxial growth of 3C–SiC using HMDS by atmospheric CVDMaterials Science and Engineering B, 1999
- Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky DiodesMaterials Science Forum, 1998
- High Temperature Sensors Based on Metal–Insulator–Silicon Carbide DevicesPhysica Status Solidi (a), 1997
- Fast chemical sensing with metal-insulator silicon carbide structuresIEEE Electron Device Letters, 1997
- Physical mechanism of hydrogen deposition from a scanning tunneling microscopy tipApplied Physics A, 1997
- Hydrogen adsorption states at the external and internal palladium surfaces of a palladium-silicon dioxide-silicon structureJournal of Applied Physics, 1985
- TiO2 film oxygen sensors made by chemical vapour deposition from organometallicsSensors and Actuators, 1983