Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)
- 2 October 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 133 (2-3), 422-442
- https://doi.org/10.1016/0039-6028(83)90011-0
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983
- The first stages of the Au/Ge(111) interface formationSurface Science, 1982
- Ge-Au interface formation vs. Si-Au interface formation: Are they different processes?Solid State Communications, 1982
- Structural study of Sn-induced superstructures on Ge(111) surfaces by RHEEDSurface Science, 1981
- Desorption kinetics of condensed phases Two-dimensional phases of silver on Ge(111)Surface Science, 1979
- Cohesive energy of the two-dimensional Si(111)3 × 1 Ag and Si(111)√3-R(30°)Ag phases of the Silver (deposit)-silicon(111) (substrate) systemSurface Science, 1978
- Isothermal desorption spectroscopy for the study of two-dimensional condensed phases: Investigation of the Au (deposit)/Si(111) (substrate) system; application to the Xe/(0001)graphite systemSurface Science, 1977
- A model for the Auger electron spectroscopy of systems exhibiting layer growth, and its application to the deposition of silver on nickelSurface Science, 1973
- A simple model for the dependence of Auger intensities on specimen thicknessSurface Science, 1969
- Studies of monolayers of lead and tin on Si(111) surfacesSurface Science, 1964