Absorption and photoluminescent measurements in indirect, nitrogen doped GaAs1−χPχ
- 28 February 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (5), 491-493
- https://doi.org/10.1016/0038-1098(77)91382-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
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