Heterojunction diodes of (AlGa)As−GaAs with improved degradation resistance
- 15 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (8), 478-480
- https://doi.org/10.1063/1.88217
Abstract
The resistance to gradual degradation of (AlGa)As−GaAs heterojunction structures prepared by liquid phase epitaxy is shown to be greatly improved by using a very fast cooling rate. The specific diodes described are of interest as high−speed (200 MHz) LED sources for fiber−optic communications. It is suggested that the improved degradation resistance results from a reduction in the arsenic vacancy concentration incorporated in the GaAs grown at the high cooling rates.Keywords
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