Evaporation chimique du GaAs sous flux d'hydrogene et d'acide chlorhydrique
- 31 August 1973
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 8 (8), 951-960
- https://doi.org/10.1016/0025-5408(73)90080-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Croissance epitaxiale du seleniure de zinc sur l'arseniure de galliumMaterials Research Bulletin, 1971
- Contribution aux etudes theoriques du transport en phase vapeur des composes III-V: GaAs, GaP, GaSbMaterials Research Bulletin, 1971
- Vapor Phase Etching of GaAs in the H[sub 2]-H[sub 2]O Flow SystemJournal of the Electrochemical Society, 1970
- Preparation of GaAs surfaces for epitaxial depositionSolid-State Electronics, 1967
- The Etching and Polishing Behavior of Ge and Si with HIJournal of the Electrochemical Society, 1965