Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas Mixture
- 1 June 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (6A), L341
- https://doi.org/10.1143/jjap.21.l341
Abstract
The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH4–N2–H2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×1014 Ω·cm, which is sufficient to be used as a photoreceptor of electrophotography.Keywords
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