A cross-sectional TEM and glancing angle XRD study of rapid-thermal-annealed TaSi multilayers
- 31 May 1985
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (7-8), 319-324
- https://doi.org/10.1016/0167-577x(85)90031-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Microstructure and growth kinetics of CrSi2 on Si{100} studied using cross-sectional transmission electron microscopyThin Solid Films, 1985
- Graphite strip rapid isothermal annealing of tantalum silicideJournal of Applied Physics, 1984
- Thermodynamic considerations in refractory metal-silicon-oxygen systemsJournal of Applied Physics, 1984
- Composite TaSi2/n+poly-Si formation by rapid thermal annealingIEEE Electron Device Letters, 1984
- Temperature dependence of structural and electrical properties of Ta-Si thin alloy filmsJournal of Applied Physics, 1983
- Formation and Characterization of Transition-Metal SilicidesPublished by Elsevier ,1983
- Shallow PtSi-Si Schottky barrier contacts formed by a multilayer metallization techniqueJournal of Applied Physics, 1981