The interaction of As4and Ga beams on a GaAs(100) surface
- 14 September 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (17), 3205-3215
- https://doi.org/10.1088/0022-3719/9/17/015
Abstract
A model is proposed to explain the various kinetic processes occurring at a GaAs (100) surface when beams of As4 and Ga are used to grow GaAs by molecular beam epitaxy. There is a considerable amount of data available on this particular system and an attempt has been made to logically examine the fundamental surface processes and explain them by a semi-empirical model. Reasonable quantitative agreement with experiment, in the temperature range 450-600K, is achieved for much of the experimental data.Keywords
This publication has 11 references indexed in Scilit:
- The theory of desorption from a general potentialJournal of Physics C: Solid State Physics, 1976
- The theory of atomic desorption within the harmonic approximationJournal of Physics C: Solid State Physics, 1975
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- The scattering of atoms from surfaces: a modelJournal of Physics C: Solid State Physics, 1971
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967