A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (12), 2025-2030
- https://doi.org/10.1109/t-ed.1986.22862
Abstract
This paper describes a new mixed technology, called Multipower BCD, that, starting from the merging of the VDMOS silicon gate process with the conventional junction isolation process, allows the integration on a single chip of bipolar linear, CMOS logic, and DMOS power functions. The architecture of the process was chosen to optimize the power part, which generally occupies the most chip area. With the DMOS device, many other signal components have been obtained whose electrical and structural characteristics are discussed in relation to some process variables. Many test vehicles have been processed to evaluate the different structures and a first electrical application of the technology is indicated.Keywords
This publication has 9 references indexed in Scilit:
- An Integrated 8 MHz Video Output AmplifierIEEE Transactions on Consumer Electronics, 1985
- The design of a high power solid state automotive switch in CMOS-VDMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- The evolution of power device technologyIEEE Transactions on Electron Devices, 1984
- An analog technology integrates bipolar, CMOS, and high-voltage DMOS transistorsIEEE Transactions on Electron Devices, 1984
- Threshold and punchthrough behavior of laterally nonuniformally doped short-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Integrated circuits for the control of high powerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistorsIEEE Transactions on Electron Devices, 1980
- Monolithic MOS high voltage integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Surface breakdown in silicon planar diodes equipped with field plateSolid-State Electronics, 1972