Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxy
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9), 5350-5357
- https://doi.org/10.1063/1.332712
Abstract
A study of the residual impurities present in GaAs layers grown by metal-organic vapor phase epitaxy has been conducted. Gallium arsenide layers were grown from three different trimethylgallium sources as a function of the substrate temperature and the arsine partial pressure which are the main factors controlling the concentration of residual impurities. A study of the low temperature photoluminescence spectra of the layers supported by preliminary secondary ion mass spectroscopy measurements shows that the major residual acceptors are carbon, magnesium, and zinc.Keywords
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