Epitaxial indium arsenide by vacuum evaporation
- 31 January 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (1), 47-50
- https://doi.org/10.1016/0038-1101(70)90006-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical Properties of n-Type Epitaxial Films of Silicon on Sapphire Formed by Vacuum EvaporationJournal of Applied Physics, 1968
- Preparation and properties of epitaxial InAsSolid-State Electronics, 1967
- Textured Indium Arsenide FilmsJournal of Applied Physics, 1966
- Epitaxial InAs on Semi-Insulating GaAs SubstratesJournal of the Electrochemical Society, 1966
- Eigenschaften aufgedampfter InSb- und InAs-SchichtenZeitschrift für Naturforschung A, 1961
- Electrical Properties of Thin-Film SemiconductorsIBM Journal of Research and Development, 1960