High-frequency performance of submicrometer channel-length silicon MOSFETs
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12), 667-669
- https://doi.org/10.1109/55.116949
Abstract
Polycide-gate silicon n-channel MOSFETs were fabricated on the basis of a standard 0.5- mu m MOS technology and measured over the 1.5-26.5-GHz frequency range, in order to investigate the effects of channel-length reduction on device behavior at high frequency. Excellent microwave performances were obtained with a maximum operating frequency (f/sub max/) and a unity-current-gain frequency f/sub t/ near 20 GHz for 0.5- mu m-gate-length NMOS devices. An equivalent circuit for a MOSFET with its parasitic elements was extracted from measured S-parameter data. The influence of gate resistance, gate-to-drain overlap capacitance, substrate conductivity, and the transit-time effect between the source and drain on microwave characteristics was analyzed.Keywords
This publication has 4 references indexed in Scilit:
- Microwave performance of SOI n-MOSFETs and coplanar waveguidesIEEE Electron Device Letters, 1991
- A deep-submicrometer microwave/digital CMOS/SOS technologyIEEE Electron Device Letters, 1991
- A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operationIEEE Transactions on Electron Devices, 1985
- Microwave operation of submicrometer channel-length Silicon MOSFET'sIEEE Electron Device Letters, 1985