Channel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructure
- 27 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (13), 1270-1271
- https://doi.org/10.1063/1.100736
Abstract
The response of the width of the electron channel at a GaAs-AlGaAs heterointerface to variations in the gate opening of a split-gate structure is calculated using a three-dimensional solution of the Poisson equation in the continuum approximation and is analyzed in terms of the Fourier components of the perturbation. It is found that the effective potential well for the channel electron gas attenuates high wave vector components of the gate roughness.Keywords
This publication has 7 references indexed in Scilit:
- Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructureSurface Science, 1988
- Electronic states in narrow semiconducting wires near thresholdSemiconductor Science and Technology, 1988
- Spectroscopy of one-dimensional subbands on InSbSuperlattices and Microstructures, 1987
- Gate-controlled transport in narrow GaAs/As heterostructuresPhysical Review B, 1986
- Electron states in narrow gate-induced channels in SiApplied Physics Letters, 1986
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986
- Polynomial Preconditioners for Conjugate Gradient CalculationsSIAM Journal on Numerical Analysis, 1983