Electron states in narrow gate-induced channels in Si

Abstract

Self-consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal-oxide-silicon structure with an inner and an outer gate. For the cases considered (30-nm-wide gate and 80-nm-wide slit), the states of motion parallel to the Si-SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one-dimensional system with an electron density ≲106 cm−1.