Isolated GaAs transistors on high-resistivity GaAs substrate
- 31 August 1966
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (8), 826-827
- https://doi.org/10.1016/0038-1101(66)90123-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965