Residual Donor Impurities in MO-CVD Gallium Arsenide

Abstract

Residual donor species as well as their concentrations in undoped MO-CVD GaAs have been investigated using far-infrared laser magneto-optics with intrinsic photoexcitation. Both donor and acceptor concentrations have been precisely determined for various samples grown under different conditions. It has been found that the main donor species in MO-CVD GaAs are Si and Ge, the relative concentrations of which depend on the partial pressure of AsH₃.