Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
- 1 August 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (8B), L855
- https://doi.org/10.1143/jjap.39.l855
Abstract
Single electron nonvolatile memory devices are fabricated using a narrow and short channel transistor and silicon nanocrystals as a floating gate. The silicon nanocrystals are deposited by very-high-frequency plasma processing. This deposition technique offers not only control of the dot size but also promises precise control of the tunnel oxide thickness. A single electron charging effect is observed for such devices at 77 K.Keywords
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