The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3), 243-262
- https://doi.org/10.1016/0022-0248(86)90445-8
Abstract
No abstract availableKeywords
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