Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 197-200
- https://doi.org/10.1016/0022-0248(89)90381-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxyApplied Physics Letters, 1987
- Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxyApplied Physics Letters, 1985
- Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy systemApplied Physics Letters, 1985
- Thermal desorption spectroscopy of Xe at the Si(111) as a local probe for surface structuresJournal of Vacuum Science & Technology A, 1985
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971