On the long-term stability of CdxHg1−xTe at 300 K
- 1 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (5), 379-380
- https://doi.org/10.1063/1.91494
Abstract
Recently reported changes in the characteristics of bulk CdxHg1−xTe material stored open for periods of years at 300 K can be explained by the cross diffusion of Hg in the presence of interstitial‐vacancy concentration gradients and/or surface exchange with the ambient. These mechanisms are thought to be inoperative in working photoconductive devices fabricated from such materials.Keywords
This publication has 4 references indexed in Scilit:
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- The pressure-temperature phase diagrams of the HgTe and Hg1?x CdxTe systemsJournal of Materials Science, 1977
- Single crystal growth of Hg1-xCdxTeJournal of Electronic Materials, 1972
- Anomalous Electrical Properties of p-Type Hg1−xCdxTeJournal of Applied Physics, 1971