Proton Tunneling with Millielectrovolt Energies at the Be-H Acceptor Complex in Silicon

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Abstract
High-resolution temperature-dependent measurements of the infrared spectra associated with the acceptor complexes Be-H and Be-D in Si together with direct far-infrared studies of the low-lying transitions provide an unambiguous identification of motional tunneling at electronic defects in elemental semiconductors. This novel system consists of a proton or deuteron tunneling around the substitutional Be double acceptor.