Crystallinity of ZnS:Tb,F thin films and characteristics of green-color thin-film electroluminescent devices prepared by rf-magnetron sputtering
- 15 November 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (10), 4655-4659
- https://doi.org/10.1063/1.352121
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High luminous efficiency thin-film electroluminescent devices with low resistivity insulating materialsJournal of Applied Physics, 1992
- Effects of Annealing on ZnS:Tb, F Electroluminescent Thin Films Prepared by rf Magnetron SputteringJapanese Journal of Applied Physics, 1987
- Tb-F emission centers in ZnS:Tb,F thin-film electroluminescent devicesJournal of Applied Physics, 1987
- Electroluminescence and photoluminescence in sputtered ZnS:TbFx thin filmsApplied Physics Letters, 1986
- High-brightness green-emitting electroluminescent devices with ZnS:Tb,F active layersApplied Physics Letters, 1986
- Growth of crystalline zinc sulfide films on a (111)-oriented silicon by molecular-beam epitaxyJournal of Applied Physics, 1986
- Green Electroluminescence in ZnS:TbF3 Thin Films Prepared by Electron-Beam CoevaporationJapanese Journal of Applied Physics, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Bright green electroluminescence in thin-film ZnS : TbF3Applied Physics Letters, 1979
- ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN II-VI COMPOUNDS VIA IMPACT EXCITATIONApplied Physics Letters, 1968