Energy relaxation of photoexcited electrons in n- and p-Ge by magneto-impurity and magnetophonon processes

Abstract

Resonant structure in the photomagnetic EMF of n- and p-Ge at liquid helium temperatures reveals two distinct energy relaxation mechanisms for the intrinsically excited electrons. The first arises from capture of hot electrons by ionised donors accompanied by the emission of an LO phonon, the second involves inelastic scattering of electrons by excitation or de-excitation of natural or acceptor impurities. The strength of the series associated with LO phonon emission shows directly that hot electrons play an important role in the transport properties of intrinsically photoexcited Ge at low temperatures.