GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy

Abstract

Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 Å single well confirmed the Ga1−xInxSb composition to be x=0.15, for which the lattice mismatch is ≊1.0%. Photoluminescence and photoconductivity from this sample both showed a signal due to carriers in the well, the position of which was in good agreement with the calculated band diagram. Shubnikov–de Haas oscillations in the transverse magnetoresistance (ρxx) of a four-period multiquantum well, and the associated quantum Hall effect, indicated that a two-dimensional hole gas was present in one of the wells. Unusually, the strongest oscillations were seen for occupancy of an odd number of (spin split) Landau levels (ν=1,3,5,...,etc.) This sample also showed luminescence peaks at 738 and 755 meV which were attributed to recombination in the wells.