Molecular-beam epitaxy of GaSb/AlSb optical device layers on Si(100)
- 1 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (11), 3909-3911
- https://doi.org/10.1063/1.336734
Abstract
We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular-beam epitaxy. High-quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8 μm have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in situ by reflection high-energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.Keywords
This publication has 20 references indexed in Scilit:
- Molecular beam epitaxy of GaAs and AlGaAs on SiApplied Physics Letters, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)GeApplied Physics Letters, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlatticesJournal of Crystal Growth, 1979
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth MethodJapanese Journal of Applied Physics, 1967