n-CuInSe2/polysulfide photoelectrochemical solar cells
- 15 April 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8), 727-728
- https://doi.org/10.1063/1.93206
Abstract
We report that n‐type single crystals of n‐CuInSe2 in aqueous polysulfide solution exhibit high quantum efficiencies of 0.8–0.9 in the wavelength region between 600–1150 nm when used as photoanodes in photoelectrochemical cells. Photocurrents of 28 mA/cm2 were measured on a ’’winter’’ day in Rehovot (71 mW/cm2) which corresponds to 40 mA/cm2 under AM1 (Air Mass 1) conditions (100‐mW/cm2 sunlight). Stability tests of n‐CuInSe2 photoanodes (20 000‐C/cm2 photocharge passage) at short circuit current densities of 40 mA/cm2 have shown no deterioration whatsoever of the measured photocurrents.Keywords
This publication has 10 references indexed in Scilit:
- Effect of Surface Etching and Morphology on the Stability of CdSe / S x = Photoelectrochemical CellsJournal of the Electrochemical Society, 1981
- Composition Dependence of the Band Gap of CuInS2xSe2(1−x)Physica Status Solidi (b), 1981
- Photoelectrochemistry of the CuInS2/Sn2− systemSolar Energy Materials, 1981
- Some recent progress in semiconductor-liquid junction solar cellsElectrochimica Acta, 1980
- S/Se Substitution in Polycrystalline CdSe Photoelectrodes: Photoelectrochemical Energy ConversionJournal of the Electrochemical Society, 1978
- CuInS2 Liquid Junction Solar CellsJournal of the Electrochemical Society, 1978
- Thin-film CuInSe2/CdS heterojunction solar cellsApplied Physics Letters, 1976
- Isotopic enrichment of SF6 in S34 by multiple absorption of CO2 laser radiationApplied Physics Letters, 1975
- Electronic Structure of AgInand CuInPhysical Review B, 1973
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972