Thin-film CuInSe2/CdS heterojunction solar cells
- 15 August 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (4), 268-270
- https://doi.org/10.1063/1.89041
Abstract
The fabrication procedures and characteristics of several thin‐film p‐CuInSe2/n‐CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe2 or through CdS) are discussed. Efficiencies in the range of 4–5% are reported, under 100 mW/cm2 tungsten‐halogen illumination for 1.2‐cm2 devices. Included are the spectral response and J‐V characteristics for these photovoltaic junctions.Keywords
This publication has 8 references indexed in Scilit:
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- CuInS2 thin films: Preparation and propertiesJournal of Applied Physics, 1975
- Electroluminescence and photovoltaic detection in Cd-implanted CuInSe2 p-n junction diodesApplied Physics Letters, 1975
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- Effect of surface recombination and channel on P-N junction and transistor characteristicsIRE Transactions on Electron Devices, 1962
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956