Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates
- 15 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (7), 562-564
- https://doi.org/10.1063/1.99857
Abstract
InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm−3 ) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.Keywords
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