Anisotropy of thermal expansion of GaAs on Si(001)
- 20 June 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25), 2117-2119
- https://doi.org/10.1063/1.99553
Abstract
We have measured the thermal expansion between 20 and 450 °C of epitaxially grown GaAs thin films on Si(001) as well as of the Si substrate by means of high-resolution x-ray scattering. Our results show that the thermal expansion of GaAs in the direction parallel to the film plane follows the thermal expansion of the silicon substrate and is therefore smaller than in bulk GaAs. Furthermore, the thermal expansion perpendicular to the film plane (parallel to the growth direction) exceeds the bulk GaAs value by the Poisson contribution as a result of the in-plane constraint. The thermal expansion coefficients for GaAs films on Si(001) substrates in the directions parallel and perpendicular to the film plane are αT∥(GaAs) =3.46×10−6/K and αT⊥(GaAs) =8.91×10−6/K, respectively.Keywords
This publication has 14 references indexed in Scilit:
- Structure of heteroepitaxial GaAs on SiSuperlattices and Microstructures, 1987
- Tunneling images of biatomic steps on Si(001)Physical Review Letters, 1987
- New method to relax thermal stress in GaAs grown on Si substratesApplied Physics Letters, 1987
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Structural properties of GaAs on (001) oriented Si and Ge substratesJournal of Applied Physics, 1987
- Biatomic Steps on (001) Silicon SurfacesPhysical Review Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interfaceApplied Physics Letters, 1986
- Ion beam sputter deposited zinc telluride filmsJournal of Vacuum Science & Technology A, 1986
- Low-Temperature Elastic Constants of Gallium ArsenideJournal of Applied Physics, 1962