Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A), L944-946
- https://doi.org/10.1143/jjap.26.l944
Abstract
No abstract availableKeywords
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