Properties of GaN tunneling MIS light-emitting diodes
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (5), 2953-2957
- https://doi.org/10.1063/1.325137
Abstract
MIS structures on GaN consisting of Au‐NaI‐GaN or Au‐Al2O3‐GaN with insulator thickness I‐V characteristics are consistent with a tunneling carrier transport mechanism, and light emission typically occurs for voltages 2–3 V. The spectral behavior of electroluminescence (EL) is in good agreement with photoluminescence (PL) data in the uv and blue spectral region. Suggestions for further work to improve radiant power output from such devices are presented.Keywords
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