The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodes
- 31 March 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (3), 365-374
- https://doi.org/10.1016/0038-1101(73)90011-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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