Electron tunnelling in self-assembled monolayers

Abstract

A review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented. Using SAMs of alkanethiols in a nanometre scale device structure, tunnelling is unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependences. Inelastic electron tunnelling spectroscopy exhibits clear vibrational modes of the molecules in the device, presenting direct evidence of the presence of molecules in the device.