Picosecond Surface Electron Dynamics on Photoexcited Si(111) (2×1) Surfaces
- 18 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (7), 881-884
- https://doi.org/10.1103/physrevlett.57.881
Abstract
Surface electrons were selectively photoexcited into the normally unoccupied antibonding surface state on the cleaved Si(111) (2×1) surface by 2.8-μ m infrared laser radiation. The time decay of the antibonding-state population was then followed in real time by picosecond time-resolved uv photoemission spectroscopy. The relaxation dynamics was found to be cleavage dependent, and appears to be controlled by defects, which give rise to a unique signature in the photoemission spectra.Keywords
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