A DC-12 GHz Monolithic GaAsFET Distributed Amplifier
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (7), 969-975
- https://doi.org/10.1109/tmtt.1982.1131185
Abstract
A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. The amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 X0.97-mm die. Its gain versus frequency is very flat, and |S/sub 11/|, |S/sub 12/|, and |S/sub 22/| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.Keywords
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