Specific Heat of Amorphous Germanium at Very Low Temperatures
- 19 April 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (16), 1121-1124
- https://doi.org/10.1103/physrevlett.48.1121
Abstract
A specific-heat study of a tetrahedrally bonded amorphous semiconductor at very low temperatures (0.08-2.5 K) is reported. Through an investigation of as-evaporated and annealed amorphous Ge films it can be shown that the contribution by low-energy excitations considered akin to the amorphous state is at least six times smaller than in vitreous silica. The specific heat observed below 1 K is mainly attributed to localized unpaired electronic states ("dangling bonds") situated in clusters.Keywords
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