GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser
- 1 August 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3), 874-877
- https://doi.org/10.1063/1.337328
Abstract
We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface‐emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular‐beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34‐nm longitudinal mode spacing, and a 2.3‐nm peak width of the laser emission were observed for the 6‐μm‐thick multilayer.Keywords
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