Refractive index of GaAs-AlAs superlattice grown by MBE
- 1 March 1983
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (2), 397-411
- https://doi.org/10.1007/bf02651139
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength RegionJapanese Journal of Applied Physics, 1981
- IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavityApplied Physics Letters, 1981
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxyApplied Physics Letters, 1979
- Optical analysis of multiple-quantum-well lasersApplied Optics, 1979
- Absorption, refractive index, and birefringence of AlAs-GaAs monolayersJournal of Applied Physics, 1977
- Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eVJournal of Applied Physics, 1974
- Refractive index of AlxGa1−xAs between 1.2 and 1.8 eVApplied Physics Letters, 1974