Investigation of the Melting Temperature of Amorphous Silicon
- 15 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (7), 498-501
- https://doi.org/10.1103/physrevlett.48.498
Abstract
Time-resolved optical reflectivity measurements were used to investigate phase changes which occur in silicon during cw-laser heating. It is shown that amorphous silicon does not melt at a temperature significantly lower than the melting point of crystalline silicon (1693 K), contrary to recent reports which suggested a 300- to 500-K melting-point depression.Keywords
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