Photoluminescence from InGaAs-GaAs strained-layer superlattices grown by flow-rate modulation epitaxy
- 11 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2), 123-125
- https://doi.org/10.1063/1.99070
Abstract
In0.063Ga0.937As-GaAs strained-layer superlattices are grown by alternately supplying organometals and arsine. This method is called flow-rate modulation epitaxy. These superlattices display low-temperature (2 K) photoluminescence with a very narrow linewidth that is less than 1 meV. Three sharp lines are clearly resolved in the photoluminescence spectra. Model calculation confirms that these lines are not caused by a fluctuation of well thickness. These lines result from electronic transitions through different exciton states, which are free and bound excitons. Flow-rate modulation epitaxy enables the growth of atomically flat InGaAs-GaAs interfaces which make the excitonic emission lines very sharp. Thus, free-exciton and impurity-bound exciton lines are well resolved.Keywords
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