The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells
- 1 December 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (12), 2239-2246
- https://doi.org/10.1088/0268-1242/9/12/013
Abstract
Photoluminescence (PL) from GaAs quantum wells with widths from 50 AA to 300 AA and AlxGa1-xAs barriers (x=0.3 and 1) was studied under pressure up to 35 kbar at two temperatures (300 K and 77 K). We used (and compared) three types of pressure devices: gas cells, liquid cells and the diamond-anvil cell. Accurate values for the pressure variation of the PL energy were obtained. They reveal the small dependence on the parameters of the well, in agreement with the envelope-function calculation. Pressure shifts of the PL lines is the same at 77 K and at 300 K. In several samples we found the change of the pressure coefficient of the direct ( Gamma ) line at the Gamma -X crossover pressure. We interpret this as the resonance effect due to the mixing of the Gamma state in the well with the X continuum in the barriers. This means that the pressure dependence of the quantum-well lines should not be fitted with a single curve below and above the Gamma -X crossover pressure. From our results we obtain the linear pressure coefficient of the GaAs energy gap equal to 11.6 meV kbar-1. The deformation potential of the gap seems to be almost independent of pressure up to 15 kbar.Keywords
This publication has 17 references indexed in Scilit:
- Γ-X mixing in GaAs/As coupled double quantum wells under hydrostatic pressurePhysical Review B, 1993
- Optical pressure sensors based on semiconductor quantum wellsSensors and Actuators A: Physical, 1992
- Pressure-induced resonance broadening of exciton line shapes in semiconductors: Direct determination of intervalley scattering rates in GaAsPhysical Review B, 1991
- Photoluminescence spectroscopy in GaAs/AlAs superlattices as a function of temperature and pressure: The influence of sample qualityPhysical Review B, 1991
- Effect of pressure on the low-temperature exciton absorption in GaAsPhysical Review B, 1990
- Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and X valleys in GaAs/AsPhysical Review B, 1989
- Pressure dependence of direct and indirect optical absorption in GaAsPhysical Review B, 1987
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- High-pressure studies of GaAs-As quantum wells of widths 26 to 150 ÅPhysical Review B, 1986
- High pressure cell for magneto-optical experimentsJournal of Physics E: Scientific Instruments, 1986