Microstructural Study of GaN Grown on Sapphire by MOCVD
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983