Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
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- 10 December 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (10), 573-575
- https://doi.org/10.1109/led.2002.802667
Abstract
We fabricated decananometer-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As high-electron mobility transistors (HEMTs) with a very short gate-channel distance. We obtained a cutoff frequency f/sub T/ of 562 GHz for a 25-nm-gate HEMT. This f/sub T/ is the highest value ever reported for any transistor. The ultrahigh f/sub T/ of our HEMT can be explained by an enhanced electron velocity under the gate, which was a result of reducing the gate-channel distance.Keywords
This publication has 10 references indexed in Scilit:
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff FrequencyJapanese Journal of Applied Physics, 2002
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility TransistorsJapanese Journal of Applied Physics, 2002
- Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequencyIEEE Electron Device Letters, 2001
- Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequencyIEEE Electron Device Letters, 2001
- High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP SubstratesJapanese Journal of Applied Physics, 2000
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff FrequencyJapanese Journal of Applied Physics, 1999
- Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility TransistorsJapanese Journal of Applied Physics, 1998
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988