Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High-Energy Neutrons
- 1 May 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (6), 2645-2647
- https://doi.org/10.1063/1.1709962
Abstract
Evidence is reported for the existence of damage regions in Si, GaAs, and InSb irradiated with mono‐energetic 14‐MeV neutrons. The regions were revealed by using a chemical etch and observing carbon replicas of the surface with an electron microscope.Keywords
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