Observation of Impurity Cyclotron Resonance inHg1xCdxTe

Abstract
Impurity cyclotron resonance (ICR) has been observed in nHg1xCdxTe. This experiment provides conclusive evidence for donor-bound electrons in this semiconductor. The separation between the ICR and the free-carrier resonance is in satisfactory agreement with theoretical predictions for hydrogenic donors in a strong magnetic field. Saturation of the ICR absorption was used to determine the electron lifetimes of Å 106 sec in the lowest Landau level.