Radiative Recombination in Silicon p‐n Junctions
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 36 (1), 311-319
- https://doi.org/10.1002/pssb.19690360132
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Radiative Spectra from Shallow Donor-Acceptor Electron Transfer in SiliconPhysical Review B, 1969
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Optical Measurement of Compensation in Highly Doped SiliconPhysica Status Solidi (b), 1967
- Observation of the Recombination Radiation from Silicon p-n JunctionJapanese Journal of Applied Physics, 1963
- Injection electroluminescence in siliconProceedings of the IEEE, 1963
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Analysis of intrinsic recombination radiation from silicon and germaniumJournal of Physics and Chemistry of Solids, 1959
- Radiation Resulting from Recombination of Holes and Electrons in SiliconPhysical Review B, 1956
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949