Techniques for small-signal analysis of semiconductor devices
- 1 October 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (10), 2028-2037
- https://doi.org/10.1109/t-ed.1985.22235
Abstract
Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state analysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost and programming commitment.Keywords
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