A Description of MOS Internodal Capacitances for Transient Simulations
- 1 October 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 1 (4), 150-156
- https://doi.org/10.1109/tcad.1982.1270005
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Measurement of intrinsic capacitances of MOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- IIB-4 a unified device model for a short channel MOSFETIEEE Transactions on Electron Devices, 1981
- A charge-oriented model for MOS transistor capacitancesIEEE Journal of Solid-State Circuits, 1978